Product Details
AFGB40T65SQDN
Status
In Stock
SKU
C603141
Category
Discrete Semiconductors
Manufacturer
onsemi
Datasheet
N/A
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238W 80A 650V D2PAK Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | onsemi |
| Package | D2PAK |
| Td(off) | 75.2ns |
| Pd - Power Dissipation | 238W |
| Td(on) | 17.6ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@40mA |
| Gate Charge(Qg) | 76nC@15V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V |
| Reverse Recovery Time(trr) | 131ns |
| Switching Energy(Eoff) | 229uJ |
| Turn-On Energy (Eon) | 858uJ |
| Input Capacitance(Cies) | 2.495nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 50pF |
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