Product Details
DF80R12W2H3B11BOMA1
Status
In Stock
SKU
C3171193
Category
Discrete Semiconductors
Manufacturer
Infineon
Datasheet
N/A
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190W 50A 1.2kV Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Infineon |
| Package | - |
| Pd - Power Dissipation | 190W |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2.35nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.7V@15V,20A |
| Operating Temperature | -40℃~+150℃@(Tj) |
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