Product Details
DF80R12W2H3FB11
Status
In Stock
SKU
C17271226
Category
Discrete Semiconductors
Manufacturer
Infineon
Datasheet
N/A
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20mW 20A 1.2kV Through Hole,62.8x56.7mm Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Infineon |
| Package | Through Hole,62.8x56.7mm |
| Td(off) | 250ns |
| Pd - Power Dissipation | 20mW |
| Td(on) | 25ns |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.13nF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1.00mA |
| Gate Charge(Qg) | 0.32uC |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.75V@20A,15V |
| Switching Energy(Eoff) | 800uJ |
| Turn-On Energy (Eon) | 260uJ |
| Input Capacitance(Cies) | 2.35nF |
| Pulsed Current- Forward(Ifm) | 450A |
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