Product Details
FP100R12KT4
Status
In Stock
SKU
C541154
Category
Discrete Semiconductors
Manufacturer
Infineon
Datasheet
N/A
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515W 100A 1.2kV Through Hole,122x62mm Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Infineon |
| Package | Through Hole,122x62mm |
| Td(off) | 330ns |
| Pd - Power Dissipation | 515W |
| Td(on) | 160ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 6.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@3.80mA |
| Gate Charge(Qg) | 0.8uC |
| Operating Temperature | -40℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 200A |
| Vce Saturation(VCE(sat)) | 2.2V@100A,15V |
| Switching Energy(Eoff) | 5.5mJ |
| Turn-On Energy (Eon) | 5.5mJ |
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