Product Details
FP15R12YT3
Status
In Stock
SKU
C534000
Category
Discrete Semiconductors
Manufacturer
Infineon
Datasheet
N/A
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110W 25A 1.2kV IGBT Module Through Hole,55.9x45.6mm Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Infineon |
| Package | Through Hole,55.9x45.6mm |
| Pd - Power Dissipation | 110W |
| Td(off) | 370ns |
| Td(on) | 55ns |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.1nF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@0.6mA |
| Operating Temperature | -40℃~+125℃ |
| Pulsed Current- Forward(Ifm) | 30A |
| Vce Saturation(VCE(sat)) | 2.15V@15A,15V |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.6mJ |
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