Product Details
FP40R12KT3
Status
In Stock
SKU
C534037
Category
Discrete Semiconductors
Manufacturer
Infineon
Datasheet
N/A
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210W 40A 1.2kV IGBT Module Through Hole,107.5x45mm Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Infineon |
| Package | Through Hole,107.5x45mm |
| Pd - Power Dissipation | 210W |
| Td(off) | 420ns |
| Td(on) | 90ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.09nF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1.5mA |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+125℃ |
| Vce Saturation(VCE(sat)) | 1.8V@40A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 3.6mJ |
| Turn-On Energy (Eon) | 4.1mJ |
| Input Capacitance(Cies) | - |
| Pulsed Current- Forward(Ifm) | 80A |
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