Product Details
IGD08N120S7ATMA1
Status
In Stock
SKU
C36148399
Category
Discrete Semiconductors
Manufacturer
Infineon
Datasheet
N/A
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106W 24A 1.2kV TO-252-3 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Infineon |
| Package | TO-252-3 |
| Td(off) | 149ns |
| Pd - Power Dissipation | 106W |
| Td(on) | 15ns |
| Current - Collector(Ic) | 24A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.3nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@0.16mA |
| Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 55nC@15V |
| Vce Saturation(VCE(sat)) | 2V@8A,15V |
| Switching Energy(Eoff) | 410uJ |
| Turn-On Energy (Eon) | 460uJ |
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