Product Details
IGW40N120H3-HXY
Status
In Stock
SKU
C49003446
Category
Discrete Semiconductors
Manufacturer
HXY MOSFET
Datasheet
N/A
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417W 80A 1.2kV TO-247 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247 |
| Td(off) | 195ns |
| Pd - Power Dissipation | 417W |
| Td(on) | 48ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 35pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@0.25mA |
| Gate Charge(Qg) | 170nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.9V@40A,15V |
| Reverse Recovery Time(trr) | 375ns |
| Switching Energy(Eoff) | 1.6mJ |
| Turn-On Energy (Eon) | 2.65mJ |
| Input Capacitance(Cies) | 5.047nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 161pF |
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