Product Details
IKB30N65EH5ATMA1
Status
In Stock
SKU
C42434071
Category
Discrete Semiconductors
Manufacturer
Infineon
Datasheet
N/A
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188W 55A 650V TO-263-3 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Infineon |
| Package | TO-263-3 |
| Td(off) | 159ns |
| Pd - Power Dissipation | 188W |
| Td(on) | 24ns |
| Current - Collector(Ic) | 55A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 1.8nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.3mA |
| Gate Charge(Qg) | 70nC@30A,15V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 2.1V@30A,15V |
| Reverse Recovery Time(trr) | 75ns |
| Switching Energy(Eoff) | 300uJ |
| Turn-On Energy (Eon) | 870uJ |
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