Product Details
IKWH50N65EH7XKSA1
Status
In Stock
SKU
C20191523
Category
Discrete Semiconductors
Manufacturer
Infineon
Datasheet
N/A
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249W 80A 650V TO-247-3 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Infineon |
| Package | TO-247-3 |
| Td(off) | 147ns |
| Pd - Power Dissipation | 249W |
| Td(on) | 19ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 2.566nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@0.44mA |
| Gate Charge(Qg) | 102nC@50A,15V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.65V@50A,15V |
| Reverse Recovery Time(trr) | 76ns |
| Switching Energy(Eoff) | 650uJ |
| Turn-On Energy (Eon) | 1.27mJ |
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