Product Details
IKY75N120CH3XKSA1-HXY
Status
In Stock
SKU
C49003422
Category
Discrete Semiconductors
Manufacturer
HXY MOSFET
Datasheet
N/A
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930W 100A 1.2kV TO-247P-4L Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247P-4L |
| Td(off) | 188ns |
| Pd - Power Dissipation | 930W |
| Td(on) | 63ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 65pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@2.6mA |
| Gate Charge(Qg) | 307nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 2.35V@75A,15V |
| Reverse Recovery Time(trr) | 366ns |
| Switching Energy(Eoff) | 3mJ |
| Turn-On Energy (Eon) | 3.9mJ |
| Input Capacitance(Cies) | 9.883nF |
| Pulsed Current- Forward(Ifm) | 300A |
| Output Capacitance(Coes) | 274pF |
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