Product Details
IRGP4266-EPBF-HXY
Status
In Stock
SKU
C49003470
Category
Discrete Semiconductors
Manufacturer
HXY MOSFET
Datasheet
N/A
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330W 90A 650V TO-247 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247 |
| Pd - Power Dissipation | 330W |
| Td(off) | 130ns |
| Td(on) | 20ns |
| Current - Collector(Ic) | 90A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 23pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA |
| Gate Charge(Qg) | 104nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 2.1V@75A,15V |
| Reverse Recovery Time(trr) | 95ns |
| Switching Energy(Eoff) | 920uJ |
| Turn-On Energy (Eon) | 2.04mJ |
| Input Capacitance(Cies) | 2.81nF |
| Pulsed Current- Forward(Ifm) | 300A |
| Output Capacitance(Coes) | 215pF |
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