Product Details
JNG10T65DJS1
Status
In Stock
SKU
C51484239
Category
Discrete Semiconductors
Manufacturer
JIAENSEMI
Datasheet
N/A
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100W 20A 650V TO-252-2L Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | JIAENSEMI |
| Package | TO-252-2L |
| Pd - Power Dissipation | 100W |
| Td(off) | 71ns |
| Td(on) | 12ns |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 10pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Gate Charge(Qg) | 28nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 2.2V@10A,15V |
| Reverse Recovery Time(trr) | 57ns |
| Switching Energy(Eoff) | 170uJ |
| Turn-On Energy (Eon) | 180uJ |
| Input Capacitance(Cies) | 670pF |
| Pulsed Current- Forward(Ifm) | 30A |
| Output Capacitance(Coes) | 37pF |
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