Product Details
JNG25T65KS1
Status
In Stock
SKU
C51484251
Category
Discrete Semiconductors
Manufacturer
JIAENSEMI
Datasheet
N/A
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138.9W 50A 650V TO-263 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | JIAENSEMI |
| Package | TO-263 |
| Td(off) | 75ns |
| Pd - Power Dissipation | 138.9W |
| Td(on) | 22ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 8pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.7V@25A,15V |
| Reverse Recovery Time(trr) | 60ns |
| Switching Energy(Eoff) | 490uJ |
| Turn-On Energy (Eon) | 660uJ |
| Input Capacitance(Cies) | 978pF |
| Pulsed Current- Forward(Ifm) | 75A |
| Output Capacitance(Coes) | 90pF |
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