Product Details
JNG50T65HJU1
Status
In Stock
SKU
C51484258
Category
Discrete Semiconductors
Manufacturer
JIAENSEMI
Datasheet
N/A
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535W 100A 650V TO-247 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | JIAENSEMI |
| Package | TO-247 |
| Td(off) | 193ns |
| Pd - Power Dissipation | 535W |
| Td(on) | 52ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 37pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA |
| Gate Charge(Qg) | 158nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.8V@50A,15V |
| Reverse Recovery Time(trr) | 82ns |
| Switching Energy(Eoff) | 1mJ |
| Turn-On Energy (Eon) | 1.7mJ |
| Input Capacitance(Cies) | 4.82nF |
| Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 170pF |
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