Product Details
MG100P12E2
Status
In Stock
SKU
C781182
Category
Discrete Semiconductors
Manufacturer
YANGJIE
Datasheet
N/A
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625W 100A 1.2kV E2 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | YANGJIE |
| Package | E2 |
| Td(off) | 395ns |
| Pd - Power Dissipation | 625W |
| Td(on) | 240ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.4nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@4mA |
| Operating Temperature | -40℃~+125℃ |
| Gate Charge(Qg) | 0.54uC |
| Vce Saturation(VCE(sat)) | 2.25V@100A,15V |
| Reverse Recovery Time(trr) | 85ns |
| Switching Energy(Eoff) | 7.3mJ |
| Turn-On Energy (Eon) | 4.1mJ |
| Input Capacitance(Cies) | 5.8nF |
| Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 0.6nF |
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